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ST180C..C SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK)
350A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical
case style TO-200AB (A-PUK)
Units
A C A C A A KA2s KA2s V s C
ST180C..C
350 55 660 25 5000 5230 125 114 400 to 2000 100 - 40 to 125
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ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 08 ST180C..C 12 16 18 20
Index
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V DRM /V RRM , max. repetitive peak and off-state voltage V
400 800 1200 1600 1800 2000
VRSM , maximum nonrepetitive peak voltage V
500 900 1300 1700 1900 2100
I DRM /I RRM max.
@ TJ = TJ max
mA
30
12
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current
ST180C..C
350 (140) 55 (85) 660 5000 5230 4200 4400
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA s
2
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I 2t
Maximum I2t for fusing
125 114 88 81
I t
2
Maximum I t for fusing
2
1250 1.08
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Max. (typical) latching current
V 1.14 (I > x IT(AV)),TJ = TJ max.
2222222222222
1.18 m 1.14 1.96 600 1000 (300) mA V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)),TJ = TJ max. Ipk= 750A, TJ = TJ max, tp = 10ms sine pulse TJ = TJ max, anode supply 12V resistive load
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Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
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Fig. 8 - Maximum Non-Repetitive Surge Current Si l d D bl Sid C l d
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Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z thJ-hs Characteristics
Fig. 11 - Gate Characteristics
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Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Typical turn-off time
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ST180C..C
1000 1.0
Units Conditions
A/s Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di g /dt = 1A/s Vd = 0.67% VDRM, TJ = 25C ITM = 300A, TJ = TJ max, di/dt = 20A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t p = 500s
s 100
Blocking
Parameter
dv/dt IDRM IRRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST180C..C
500 30
Units Conditions
V/s mA TJ = TJ max linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied
23
Triggering
Parameter
PGM Maximum peak gate power
ST180C..C
10 2.0 3.0 20
Units Conditions
W A TJ = TJ max, t p 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. 180 IGT DC gate current required to trigger 90 40 2.9 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.8 1.2
V 5.0 MAX. 150 3.0 10 0.25 mA V V mA
TJ = TJ max, tp 5ms
TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
TJ = TJ max
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Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
Index
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ST180C..C
-40 to 125 -40 to 150 0.17 0.08 0.033 0.017 4900 (500)
Units Conditions
C DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
K/W
wt
Approximate weight Case style
50
TO - 200AB (A-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
12
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
Single Side Double Side 0.015 0.018 0.024 0.035 0.060 0.015 0.019 0.024 0.035 0.060 Single Side Double Side 0.011 0.019 0.026 0.036 0.060 0.011 0.019 0.026 0.037 0.061
Units
Conditions
TJ = TJ max.
K/W
Ordering Information Table
Device Code
ST
1
18
2
0
3
C
4
20
5
C
6
1
7 8
1 2 3 4 5 6 7
-
Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) C = Puk Case TO-200AB (A-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 2222222222222
8
-
Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
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Outline Table
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ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN.
13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
Case Style TO-200AB (A-PUK)
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
All dimensions in millimeters (inches)
23
25 5
42 (1.65) MAX. 28 (1.10)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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